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US 5,858,880 AGranted
Method of treating a semi-conductor wafer
AssigneeTrikon Equipment Limited
InventorsChristopher David Dobson, Adrian Kiermasz
Life of this patent
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Abstract
In a method of treating a semi-conductor wafer a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
Claims16
A method of treating a semiconductor wafer, comprising:
- positioning the wafer in a chamber;
- introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form;
- reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer;
- and
- depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
2 more elements
A method of treating a semiconductor wafer, comprising:
- positioning the wafer in a first chamber;
- introducing into the first chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form;
- reacting within the first chamber the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer;
- and depositing within the first chamber a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate;
- positioning the wafer in a second chamber;
- depositing within the second chamber a capping layer on the diffusion layer;
- and baking the wafer within the second chamber.
4 more elements
A method of treating a semiconductor wafer, comprising:
- positioning the wafer in a chamber;
- introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form;
- reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer;
- and
- depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate, wherein the diffusion layer acts as a permeable membrane.
2 more elements
Dependencies are inferred from the claim text.