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AssigneeLSI Logic Corporation
InventorsSheldon Aronowitz, James Kimball
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Formation of a barrier region in a single crystal group IV semiconductor substrate at a predetermined spacing from a doped region in the substrate is described to prevent or inhibit migration of dopant materials from an adjacent doped region through the barrier region. By implantation of group IV materials into a semiconductor substrate to a predetermined depth in excess of the depth of a doped region, a barrier region can be created in the semiconductor to prevent migration of the dopants from the doped region through the barrier region. The treatment of the single crystal substrate with the group IV material is carried out at a dosage and energy level sufficient to provide such a barrier region in the semiconductor substrate, but insufficient to result in amorphization (destruction) of the single crystal lattice of the semiconductor substrate.
A process for forming a single crystal group IV semiconductor substrate having a barrier region in said substrate comprising implanted group IV atoms which form a barrier region at a depth in said substrate sufficiently close to a doped region in said substrate to inhibit migration through said barrier region of dopant atoms from said doped region in said semiconductor substrate which comprises:
A process for forming a single crystal silicon semiconductor substrate having a doped region and a barrier region in said substrate below said doped region comprising:
Dependencies are inferred from the claim text.