Thin film transistor-liquid crystal display and a manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsByung-Hoo Jung, Yong-Suk Jin, Joo-Hyung Lee, Chang-Won Hwang
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Abstract
The present invention relates to a thin film transistor-liquid crystal display (hereinafter referred to as a TFT-LCD) and a manufacturing method thereof. An amorphous silicon is deposited on a substrate. The amorphous silicon is transformed into a poly silicon by method of solid phase crystallization, and the first poly silicon layer pattern is formed by etching. An amorphous silicon is deposited on the first poly silicon layer pattern. The amorphous silicon is transformed into a second poly silicon layer by method of solid phase crystallization.
Claims14
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:
- depositing a seed layer on a substrate;
- forming a seed layer pattern by etching said seed layer;
- epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate;
- implanting ions in said silicon layer to obtain an ion implanted silicon layer;
- and
- annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display,
- wherein said step of forming said seed layer pattern forms said seed layer pattern in a position that corresponds to a location between source and drain electrodes in said active region of said thin film transistor liquid crystal display.
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:
- depositing a seed layer on a substrate;
- forming a seed layer pattern by etching said seed layer;
- epitaxially growing a silicon layer over said seed layer pattern and over portions of said substrate;
- implanting ions in said silicon layer to obtain an ion implanted silicon layer;
- annealing said ion implanted silicon layer to obtain said active region of said thin film transistor liquid crystal display;
- forming an oxidation layer over said active region of said thin film transistor liquid crystal display;
- depositing a gate metal over said oxidation layer;
- forming a gate pattern by etching said gate metal;
- depositing an insulating layer over said gate pattern;
- etching contact holes in portions of said oxidation layer and said insulating layer;
- and
- forming a conductor layer connected through said contact holes to portions of said active region of said thin film transistor liquid crystal display,
- wherein said step of forming said seed layer pattern forms said seed layer pattern below a location of at least one of source and drain electrodes in said active region of said thin film transistor liquid crystal display.
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:
- forming a trench by etching a substrate;
- depositing a silicon layer over said substrate and into said trench;
- annealing said silicon layer so that grains within said silicon layer become larger;
- etching said silicon layer to form a active region silicon layer pattern.
A method for manufacturing a portion of a thin film transistor liquid crystal display including an active region comprising the steps of:
- depositing an amorphous silicon layer on a substrate;
- transforming said amorphous silicon to a poly silicon layer using solid phase crystallization;
- etching said poly silicon layer to form a seed layer pattern;
- depositing another amorphous silicon layer over said seed layer pattern and portions of said substrate;
- and
- transforming said another amorphous silicon layer into said active region using solid phase crystallization.
A method for manufacturing a portion of a thin film transistor liquid crystal display comprising the step of:
- forming a seed layer pattern of amorphous silicon on a substrate;
- depositing an amorphous silicon active layer over said seed layer pattern and portions of said substrate;
- and
- projecting a laser on a part of said amorphous silicon layer to melt portions of said amorphous silicon layer that are adjacent to said seed layer pattern to form a laser crystallized region.
Dependencies are inferred from the claim text.