Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device

A fabrication process for fabricating a thin film semiconductor device having a semiconductor film formed on a surface of a glass substrate, said semiconductor film being an active layer of a transistor, the process comprising:

• placing a plurality of substrate pairs in a hot wall, vertical low pressure chemical vapor deposition reactor, the substrate pairs being glass substrates and each one of the substrate pairs having a front side and a back side, a first one of the substrate pairs having a strain point higher than a strain point of a second one of the substrate pairs, the substrate pairs being placed in the vertical low pressure chemical vapor deposition reactor having the back sides of the first and second ones of the substrate pairs against each other, the first one of the substrate pairs being below the second one of the substrate pairs, and the first and second ones of the substrates pairs being approximately parallel to each other;
• and
• forming the semiconductor film on the front sides of the first and second ones of the substrate pairs.

A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on a portion of a substrate and a semiconductor film formed on said underlevel protection layer using a plasma enhanced chemical vapor deposition reactor, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising:

• exposing the underlevel protection layer to an oxygen plasma;
• and then
• forming the semiconductor film on top of said underlevel protection layer without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.

A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer using a plasma enhanced chemical vapor deposition reactor, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising:

• exposing the underlevel protection layer to a hydrogen plasma;
• and then
• forming the semiconductor film on top of said underlevel protection layer without breaking a vacuum of the plasma enhanced chemical vapor deposition reactor.

A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer using a plasma enhanced chemical vapor deposition reactor, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising:

• depositing the semiconductor film with a deposition rate of approximately 0.1 nm/s or more to form a mixed crystallinity semiconductor film;
• and then
• melt crystallizing said semiconductor film.

A fabrication process for fabricating a thin film semiconductor device having an underlevel protection layer formed on at least a portion of a substrate and a semiconductor film formed on said underlevel protection layer using a plasma enhanced chemical vapor deposition reactor, the underlevel protection layer comprising an insulating material and the semiconductor film being an active layer of a transistor, the process comprising:

• forming a mixed-crystallinity semiconductor film, wherein chemical species containing constitutive elements of said semiconductor film and inert gases are used as source gases with a ratio of a flow rate of a gas containing the constitutive elements of the semiconductor film to a flow rate of the inert gases being less than about 1/33;
• and
• melt crystallizing said mixed-crystallinity semiconductor film.