US 5,858,813 A · Chemical mechanical polishing slurry for metal layers and films

Abstract

A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects. Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

Claims55

Dependent claims

A method for chemical-mechanical polishing of a substrate containing an insulator layer and at least one metal layer or thin-film, the method which comprises the steps of:

a) providing a chemical mechanical polishing slurry comprising:
an aqueous medium, an abrasive, an oxidizing agent, and succinic acid, wherein the selectivity between said metal layer or thin-film and said insulator layer is equal or greater than 50:1;
and
b) chemical mechanical polishing a metal layer or thin-film on a semiconductor substrate with said slurry.

1 more element

Dependencies are inferred from the claim text.

Chemical mechanical polishing slurry for metal layers and films

Life of this patent

Chemical mechanical polishing slurry for metal layers and films

Life of this patent

Abstract

Claims55