Semiconductor device and method for manufacturing the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsTakeo Ishibashi, Ayumi Minamide, Toshiyuki Toyoshima, Keiichi Katayama
Life of this patent
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Abstract
A first resist pattern, which is capable of generating an acid, is formed on a semiconductor device layer. Over the first resist pattern, a layer of a second resist, which is capable of undergoing an cross-linking reaction in the presence of an acid, is formed. Then, a cross-linked film is formed in portions of said layer of the second resist at the boundary with said first resist by action of an acid from said first resist. Thereafter, non-cross-linked portions of said second resist are removed to form a finely isolated resist pattern. The semiconductor device layer is etched, via a mask of said finely isolated resist pattern, to form a fine spaces or holes.
Claims31
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a pattern of a first resist on a substrate or on a semiconductor device layer formed on a substrate;
- forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid;
- exposing the substrate to light after forming the second resist layer, thereby generating an acid in the first resist layer;
- forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist;
- removing non-cross-linked portions of said second resist thereby forming a resist pattern;
- and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a pattern of a first resist on a substrate or on a semiconductor device layer;
- forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid;
- forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment;
- removing non-cross-linked portions of said second resist thereby forming a resist pattern;
- and etching said substrate or said semiconductor device layer via a mask of said resist pattern.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a pattern of a first resist on a substrate or on a semiconductor device layer;
- forming, over said first resist, a layer of a second resist, undergoing a cross-linking reaction in the presence of an acid;
- forming a cross-linked film in portions of said second resist, which are in contact with said first resist, by action of an acid from said first resist under heat treatment;
- removing non-cross-linked portions of said second resist thereby forming a resist pattern;
- and etching said substrate or said semiconductor device layer via a mask of said resist pattern;
- wherein said pattern of the first resist is formed of a resist which is surface-treated with an acidic liquid.
Dependencies are inferred from the claim text.