Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber;
• means for exhausting said chamber;
• a workpiece holder provided within said chamber for mounting a workpiece to be processed, said workpiece holder comprising an insulator member, an electrode disposed adjacent the insulator member and a shielding conductor surrounding the insulator member and a portion of the electrode and connected to ground;
• means for connecting the electrode to a high or low frequency power supply;
• means for generating a bias electric field near a wall surface of said chamber;
• means for generating a magnetic field substantially parallel to a chamber wall to thereby generate a magnetron discharge by the interaction between the bias electric field and the magnetic field;
• means for providing a high frequency or microwave energy into said chamber, the high frequency or microwave energy having a frequency which synchronizes a cyclotron motino of electrons traveling around an inner periphery of the chamber to form a uniform plasma;
• and
• control means for independently controlling the bias electric field generating means, the magnetic field generating means, the high frequency or microwave energy providing means and the electrode power supply, whereby plasma density distribution may be controlled by controlling the bias electric field, the plasma energy may be controlled by the applied microwave energy, and ion acceleration energy of plasma generated in the apparatus is controlled by the frequency of the power applied to the electrode.