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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTakahiro Wada, Mikihiko Nishitani, Naoki Kohara
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A thin film solar cell having high conversion efficiency is provided. The band gap of the thin film solar cell can be controlled while keeping the quality superior to conventional solar cells. The absorber layer for photovoltaic energy conversion is a Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution where X and Y are in the range of the following Equation: 0.317+0.176Y.gtoreq.X.gtoreq.0.117+0.176Y 1>X+Y>0 Y>0, The Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 based solid solution has a specific chalcopyrite type crystal structure and its lattice constant ratio of c-axis to a-axis is extremely close to two. It is most preferable that the band gap is 1.4 eV, X is 0.3, and Y is 0.4, since the conversion efficiency of a homojunction solar cell will then become a maximum.
A thin film solar cell comprising an absorber layer of Cu(In.sub.1-X Ga.sub.X) (Se.sub.1-Y S.sub.Y).sub.2 for photovoltaic energy conversion, where X and Y are in the range indicated by the following Equation (1):
A method for manufacturing a thin film solar cell having an absorber layer of Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 for photovoltaic energy conversion, where X and Y are in the range of the following Equation (1),
A method for manufacturing a thin film solar cell having an absorber layer of Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 for photovoltaic energy conversion, where X and Y are in the range of Equation (1),
A method for manufacturing a thin film solar cell having an absorber layer of Cu(In.sub.1-X Ga.sub.X)(Se.sub.1-Y S.sub.Y).sub.2 for photovoltaic energy conversion, where X and Y are in the range of Equation (1),
Dependencies are inferred from the claim text.