Arc Chamber for an ion implantation system
AssigneeThermoceramix Inc.
InventorRichard C. Abbott
Life of this patent
Estimating the term…
Abstract
The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.
Claims20
A method of fabricating a boron structure for an ion source comprising:
- positioning a substrate in a deposition chamber;
- depositing boron on a surface of the substrate to form a composite structure;
- removing the composite structure from the chamber;
- and
- assembling an ion source with the composite structure.
A method of fabricating a boron structure for an ion source comprising:
- positioning a substrate in a processing chamber;
- forming a boron layer on a surface of the substrate;
- removing the boron layer from the chamber;
- and
- processing the boron layer and assembling the ion source.
A method of fabricating a composite structure for an ion source comprising:
- positioning an ion source housing in a deposition chamber;
- depositing an amorphous boron layer on a surface of the ion source housing to form a composite baron structure;
- inserting electrodes into the composite boran structure to form an ion source for an ion implanter.
Dependencies are inferred from the claim text.