Method of forming a capacitance type gaseous sensing device and apparatus thereof

A method of forming a capacitance type sensor, comprising the steps of:

• forming a first electrode layer onto a semiconductor substrate layer;
• forming a seed layer onto a portion of said first electrode layer, said seed layer comprising an aluminum phosphate molecular sieve material;
• uniformly forming a reorganized layer that incorporates said seed layer onto the first electrode layer, the reorganized layer having a surface crystallinity, the reorganized layer being form of the aluminum phosphate molecular sieve material;
• forming a second electrode layer onto selected portions of the reorganized layer
• and wherein said uniformly forming step is performed by hydrothermal treatment of the molecular sieve material.

A method of forming a capacitance type sensor, comprising the steps of:

• depositing a first electrode layer onto a semiconductor substrate layer, the first electrode layer being formed of an oxidation resistant or inert metal;
• depositing a seed layer onto a portion of the first electrode layer by pulsed laser ablation of a target, the target and the seed layer being formed of a low density molecular sieve material;
• hydrothermally treating the seed layer to establish a reorganized layer on the first electrode layer, the reorganized layer being formed of the molecular sieve material, the reorganized layer being uniformly grown onto the first electrode layer with a crystalline surface in response to reactions with the seed layer;
• depositing a second electrode layer onto a portion of the reorganized layer, the second electrode layer being formed of an oxidative resistant or inert metal.