Current sense amplifier for RAMs
AssigneeAdvanced Micro Devices, Inc.
InventorChongjun Jiang
Life of this patent
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Abstract
An improved sense amplifier for RAM arrays is provided which reduces read operation access times, reduces static power consumption and reduces used silicon area. The improved sense amplifier includes an equalizing operation that brings the voltages on the output lines to a midpoint voltage prior to performing a read operation. By providing a midpoint voltage on the output lines, neither output line needs to transition a full rail from Vss to Vcc or vice versa during the amplifying operation, decreasing the amount of time required to read the memory cells.
Claims13
A sensing circuit comprising:
- (a) a first output line and a second output line for receiving a sensed difference voltage from a column bit line and an inverse column bit line at a first selected period of time;
- and
- (b) an equalizer for equalizing the voltage on said first and second output lines for a second selected period of time.
A method of sensing a stored value comprising:
- (a) sensing the values on a bit line and an inverse bit line and placing a corresponding voltage difference on an output line and an inverse output line;
- and
- (b) equalizing the voltages on the output line and the inverse output line to an equal voltage, midway between Vcc and Vss.
Dependencies are inferred from the claim text.