Sychronous memory burn-in method
AssigneeUnited Microelectronics Corp.
InventorsChun-Chieh Huang, Dong-Chie Liou
Life of this patent
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Abstract
A burn-in method for synchronous memory that utilizes synchronous signals for the burn-in operation. Using synchronous clock pulse signals for burning in the synchronous memory is able to exercise the burst output mode and the pipeline function, and hence the optimum burn-in results can be obtained. Furthermore, synchronous burn-in not only can increase the processing speed up to twice the conventional asynchronous burn-in method, but can simulate of the actual working environment of the synchronous memory as well. Moreover, an asynchronous burn-in method can be selected whenever required without any penalty.
Claims11
A burn-in method for testing synchronous memory that utilizes synchronous signals, wherein the synchronous memory includes a first memory group and a second memory group, and that the first memory group has a plurality of first memory addresses and the second memory group has a plurality of second memory addresses, comprising the steps of:
- a. activating the synchronous memory;
- b. maintaining a high potential at an active high data memory request mask pin of the synchronous memory;
- c. pre-charging the first memory group;
- d. pre-charging the second memory group;
- e. auto-refreshing the synchronous memory;
- f selecting synchronous burn-in method for exercising the synchronous memory;
- g. changing to a low potential to deactivate the data memory request mask pin of the synchronous memory;
- h. activating the first memory group;
- i. storing and retrieving data continuously to and from the locations indicated by the first memory addresses;
- j. activating the second memory group;
- and pre-charging the first memory group at the same time;
- k. storing and retrieving data continuously to and from the locations indicated by the second memory addresses;
- l. activating the first memory group;
- and pre-charging, the second memory group at the same time;
- and
- m. repeating the steps from i to l until the burn-in operation ends.
A burn-in method for testing synchronous memory including a synchronous burn-in method and an asynchronous burn-in method, wherein the synchronous memory includes a first memory group and a second memory group, and that the first memory group has a plurality of first memory addresses and the second memory group has a plurality of second memory addresses, comprising the steps of
- a. activating the synchronous memory;
- b. maintaining a high potential at an active high data memory request mask pin of the synchronous memory;
- c. pre-charging the first memory group;
- d. pre-charging the second memory group;
- e. auto-refreshing the synchronous memory;
- f selecting a burn-in method for exercising the synchronous memory;
- g. changing to a low potential to deactivate the data memory request mask pin of the synchronous memory;
- and
- h. alternately activating the first memory group and the second memory group for storing and retrieving data to and from locations indicated by the first memory addresses and the second memory addresses respectively, until the testing ends.
A burn-in method for testing synchronous memory that utilizes synchronous signals, wherein the synchronous memory includes a first memory group and a second memory group, and that the first memory group has a plurality of first memory addresses and the second memory group has a plurality of second memory addresses, comprising the steps of:
- a. activating the first memory group;
- b. storing and retrieving data continuously to and from the locations indicated by the first memory addresses;
- c. activating the second memory group;
- and pre-charging the first memory group at the same time;
- d. storing and retrieving data continuously to and from the locations indicated by the second memory addresses;
- e. activating the first memory group;
- and pre-charging the second memory group at the same time;
- and
- f. repeating the steps from a to e until the burn-in operation ends.
Dependencies are inferred from the claim text.