Sensing amplifier with current mirror

A sense amplifier comprising:

• means for generating a reference signal;
• means for generating a sense signal responsive to the state of a memory cell;
• and
• a differential amplifier for amplifying the difference between the reference signal and the sense signal;
• wherein the means for generating a reference signal includes a first transistor, the means for generating a sense signal includes a second transistor, and the first and second transistors are coupled to form a current mirror having a common control line coupled to an input terminal of the differential amplifier.

A method for sensing the state of a memory cell comprising:

• generating a first current;
• discharging the first current, thereby generating a reference signal;
• generating a second current;
• discharging the second current responsive to the state of the memory cell, thereby generating a sense signal;
• amplifying the difference between the reference signal and the sense signal;
• and
• controlling the first and second currents responsive to a common control signal;
• wherein the sense signal functions as the common control signal.

A sense amplifier comprising:

• a first current source for generating a reference signal at a reference node;
• a second current source coupled to a sense line for generating a sense signal responsive to the state of a memory cell;
• and
• a differential amplifier coupled to the first and second current sources for amplifying the difference between the sense signal and the reference signal;
• wherein the first current source and the second current source are controlled by a common control signal on a common line coupled to the first current source, the second current source, and the reference node.

A sense amplifier comprising:

• a first current source coupled to a first node for generating a first signal responsive to current flowing through a first cell;
• a second current source coupled to a second node for generating a second signal responsive to current flowing through a second cell;
• a differential amplifier coupled to the first and second nodes for amplifying the difference between the first signal and the second signal;
• and
• a common control line coupled between the first and second current sources and to the first node.

A method for sensing the state of a memory cell comprising:

• generating a first current;
• discharging the first current, thereby generating a reference signal;
• generating a second current;
• discharging the second current responsive to the state of the memory cell, thereby generating a sense signal;
• amplifying the difference between the reference signal and the sense signal;
• and
• controlling the first and second currents responsive to a common control signal;
• wherein the reference signal functions as the common control signal.