Field effect transistor having dielectrically isolated sources and drains
AssigneeSTMicroelectronics S.r.l.
InventorRichard A. Blanchard
Life of this patent
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Abstract
A field-effect transistor structure is described having a monocrystalline silicon channel region which is epitaxially continuous with an underlying monocrystalline silicon body region. Polycrystalline silicon source and drain regions abut the channel region. The source and drain regions are electrically isolated from the underlying body region by a patterned dielectric layer, which may include a thick field oxide. A polycrystalline silicon gate is capacitively coupled with the channel region by a second dielectric layer. The gate may extend laterally to partly overlap the source and drain regions.
Claims20
An integrated circuit field-effect transistor structure, comprising:
- a monocrystalline semiconductor channel region;
- a conductive gate capacitively coupled to the channel region;
- a monocrystalline semiconductor body region which underlies and is epitaxially continuous with the channel region;
- first and second polycrystalline semiconductor source/drain regions which laterally adjoin opposing sides of the channel region and extend therefrom, the source/drain regions and the channel region residing in a single layer of semiconductor material;
- and
- a patterned dielectric layer, which underlies the source/drain regions but not the channel region.
A field-effect transistor, comprising:
- first and second polycrystalline semiconductor regions of a first conductivity type;
- a monocrystalline semiconductor region of a second conductivity type located between and laterally adjacent to the first and second polycrystalline semiconductor regions, the monocrystalline semiconductor region and the first and second polycrystalline semiconductor regions being formed in a single continuous semiconductor layer;
- a dielectric region overlying the monocrystalline semiconductor region;
- and
- a conductive region overlying the dielectric layer.
A field-effect transistor, comprising:
- a monocrystalline semiconductor body region;
- a monocrystalline semiconductor channel region which overlies and extends epitaxially from the body region;
- a conductive gate region capacitively coupled with the channel region;
- and
- first and second polycrystalline semiconductor source/drain regions which are electrically isolated from the body region and which laterally adjoin opposite sides of the channel region, the source/drain regions and the channel region being a single contiguous semiconductor layer.
Dependencies are inferred from the claim text.