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US 5,856,682 AGranted
Semiconductor light-emitting device and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorKazuaki Sasaki
Life of this patent
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Abstract
A semiconductor light-emitting device includes: a semiconductor substrate of a first conductive type, and a multilayered structure formed on the semiconductor substrate. The multilayered structure includes a first cladding layer of the first conductive type, an undoped active layer, a second cladding layer of a second conductive type, and a current diffusing layer of the second conductive type which are subsequently deposited. An undoped spacer layer is provided between the undoped active layer and the second cladding layer.
Claims17
A semiconductor light-emitting device, comprising:
- a semiconductor substrate of a first conductive type;
- and
- a multilayered structure formed on the semiconductor substrate, the multilayered structure including at least a first cladding layer of the first conductive type, an undoped active layer, a second cladding layer of a second conductive type, and a current diffusing layer of the second conductive type, which are subsequently deposited,
- wherein an undoped spacer layer is further provided between the undoped active layer and the second cladding layer, the undoped spacer layer having a composition ratio different from a composition ratio of the undoped active layer;
- and
- wherein the second cladding layer and the undoped spacer layer are made of a material having the same composition.
3 more elements
A semiconductor light-emitting device, comprising:
- a semiconductor substrate of a first conductive type;
- a multilayered structure formed on the semiconductor substrate, including:
- a first cladding layer of the first conductive type;
- an undoped active layer formed over the first cladding layer made of a material having a first composition with a first composition ratio;
- an undoped spacer layer made of a material having a second composition with a second composition ratio different from the first composition radio and with each constituent element in the first composition having a first atomic percentage;
- a second cladding layer of a second conductive type formed on the undoped spacer layer and made of a material having the second composition with each element having the second atomic percentage;
- and
- a current diffusing layer of the second conductive type formed on the second cladding layer,
- wherein the diffusion of a dopant of the second conductive type contained in the second cladding layer induced by the current diffusing layer is blocked by the undoped spacer layer, thereby improving the efficiency of the semiconductor light-emitting device.
6 more elements
Dependencies are inferred from the claim text.