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US 5,856,681 AGranted
Semiconductor device
AssigneeFujitsu Limited
InventorToshio Ohshima
Life of this patent
Estimating the term…
Abstract
The present invention relates to a semiconductor device in which an electric resistance in a carrier path is modulated by changing a voltage applied to the carrier path. The semiconductor device is provided with a semiconductor layer in which conductive particles are dispersed to scatter carriers, a first electrode, and a second electrode for passing the carriers through the semiconductor device in cooperation with the first electrode.
Claims30
A semiconductor device, comprising:
- a semiconductor layer having a channel region;
- a carrier supply layer formed on the semiconductor layer;
- a source electrode and a drain electrode formed above the carrier supply layer, the source electrode and drain electrode facing each other through the channel region;
- and
- a gate electrode formed on the carrier supply layer and above the channel region of the semiconductor layer;
- wherein said semiconductor layer dispersedly includes fixed particles at least in the channel region, said each particle, which is conductive itself, is an aggregation of atoms selected from the group consisting of metal material, semiconductor material and superconductor material, and a resistance of said channel region is varied by controlling a resonance scattering between carriers passing through the channel region and said particles by voltage applied from said gate electrode.
3 more elements
A semiconductor device, comprising:
- a semiconductor layer having a channel region, the semiconductor layer including at least in the channel region conductive particles by which carriers are scattered;
- a carrier supply layer formed on the semiconductor layer;
- a source electrode and a drain electrode formed above said carrier supply layer, the source and the drain electrodes being arranged to face with each other through the channel region of the semiconductor layer;
- and
- a first split-gate electrode formed on the carrier supply layer and between the source and the drain electrodes, the first split gate electrode having a length extending along a direction substantially perpendicular to a main transit direction of the carriers, and the gate electrode being split into a first part and a second part between which a narrow space is formed above the-channel region.
2 more elements
A semiconductor device, comprising:
- a semiconductor drain layer;
- a drain electrode formed in contact with the semiconductor drain layer;
- a semiconductor layer formed on the semiconductor drain layer, the semiconductor layer containing conductive particles by which carriers are scattered;
- a gate electrode formed on the semiconductor layer, the gate electrode being formed to surround a periphery of the semiconductor layer;
- a source layer formed above the semiconductor layer, the source layer being placed around a central part of the semiconductor layer;
- and
- a source electrode formed above the source layer.
4 more elements
A semiconductor device, comprising:
- a semiconductor layer having a channel region, the semiconductor layer including at least in the channel region conductive particles by which carriers are scattered;
- a carrier supply layer formed on the semiconductor layer;
- and
- a source electrode and a drain electrode formed above the carrier supply layer, the source and drain electrodes facing each other through the channel region;
- wherein the conductive particles in the semiconductor layer change energy levels thereof by corresponding to an external magnetic field to yield a resistivity change in the semiconductor layer.
2 more elements
A semiconductor device, comprising:
- a channel layer in which carriers flow;
- a source electrode supplying the carriers to the channel layer and a drain electrode collecting the carriers flowed through the channel layer, each formed above the channel layer;
- and
- a gate electrode formed above a channel region of the channel layer;
- wherein said channel layer dispersedly includes fixed particles at least in the channel region, said each particle, which is conductive itself, is an aggregation of atoms selected from the group consisting of metal material, semiconductor material and superconductor material, and a resistance of said channel region is varied by controlling a resonance scattering between carriers passing through the channel region and said particles by voltage applied from said gate electrode.
2 more elements
Dependencies are inferred from the claim text.