US 5,856,677 AGranted

Pattern projection method with charged particle beam and charged particle beam projection system

AssigneeNikon Corporation

InventorTeruaki Okino

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Abstract

By causing a mask and a wafer to continuously move once or more and irradiating a plurality of small areas contained within a specific range of the mask in time sequence with a charged particle beam during each such continuous movement, the pattern in each small area is selectively projected onto a projection target area contained within a specific range of the wafer. The pattern to be projected onto one projection target area is divided and formed on a plurality of specific small areas contained within a specific range of the mask, and when the reduction ratio of the pattern projected from the mask onto the wafer is at 1/M, the continuous movement speed of the mask is set to be (N.times.M) times the continuous movement speed of the wafer (N being a real number larger than 1) and the charged particle beam to be conducted to the wafer is deflected in the direction of the continuous movement at a speed so that a relative speed of the pattern image which is projected onto the wafer and the wafer itself becomes substantially zero.

Claims8

Dependent claims

A charged particle beam projection system provided with:

drive devices that cause a mask and a radiation sensitive substrate to move continuously in a specific direction;
and
a projector device that irradiates a plurality of small areas contained within a specific range of said mask in time sequence with a charged particle beam to selectively project a pattern in each of said small areas onto one of a plurality of projection areas contained within a specific range of said radiation sensitive substrate during one set of continuous movements by said drive devices, comprising:
(a) a projection time determining device that determines a required time for pattern projection for said specific range of said mask from beginning to end, based upon an optimal value for a duration of irradiation of said charged particle beam for each of said plurality of small areas of said mask and a required time for projection preparation for each of said small areas;
(b) a continuous movement speed setting device that sets speeds of continuous movements of said mask and said radiation sensitive substrate to ensure that said mask moves from a state in which one end of said specific range of said mask is present within a mask side optical field of said projection system to a state in which another end of said specific range of said mask is present within said mask side optical field, and said radiation sensitive substrate moves from a state in which one end of said specific range of said radiation sensitive substrate is present within a radiation sensitive substrate side optical field of said projection system to a state in which another end of said specific range of said radiation sensitive substrate is present within said radiation sensitive substrate side optical field, within said required time determined by said projection time determining device;
and
(c) a speed difference eliminating device that deflects said charged particle beam to be conducted from said mask to said radiation sensitive substrate in said direction of said continuous movements at a specific speed so that a relative speed of an image of said pattern which is projected onto said radiation sensitive substrate and said radiation sensitive substrate becomes substantially zero during projection exposure.

4 more elements

A charged particle beam projection system provided with

a drive device that causes a radiation sensitive substrate to move continuously in a specific direction, and
a projector device that irradiates a plurality of small areas contained within a specific range of said mask in time sequence with a charged particle beam to selectively project a pattern in each of said small areas onto one of a plurality of projection areas contained within a specific range of said radiation sensitive substrate during one continuous movement by said drive device, comprising:
(a) a projection time determining device that determines a required time for pattern projection for said specific range of said radiation sensitive substrate from beginning to end based upon an optimal value for a duration of irradiation of said charged particle beam for each of said plurality of target areas of said radiation sensitive substrate and a time required for projection preparation for each of said target areas;
(b) a continuous movement speed setting device that sets a speed of continuous movement of said radiation sensitive substrate driven by said drive device to ensure that said radiation sensitive substrate moves from a state in which one end of said specific range of said radiation sensitive substrate is present in an optical field of said projection system at said radiation sensitive substrate side to a state in which another end of said specific range of said radiation sensitive substrate is present within said optical field at said radiation sensitive substrate side within said required time determined by said projection time determining device;
and
(c) a speed difference eliminating device that deflects said charged particle beam to be conducted from said mask to said radiation sensitive substrate in said direction of said continuous movement at a specific speed so that a relative speed of an image of said pattern which is projected onto said radiation sensitive substrate and said radiation sensitive substrate becomes substantially zero during projection exposure.

3 more elements

A charged particle beam projection system that detects positions of a mask and a radiation sensitive substrate which make continuous movements and, based upon values thereby detected, project a pattern of said mask onto said radiation sensitive substrate by deflecting a charged particle beam, comprising:

a correction device that corrects a positional deviation of a projected pattern caused by a first delay from a time when said position of said mask is detected until said charged particle beam by which said mask is irradiated is deflected and a second delay from a time when said position of said radiation sensitive substrate is detected until said charged particle beam by which said radiation sensitive substrate is irradiated is deflected.

Dependencies are inferred from the claim text.

Facts

Application: 08/917,845Filed 27 Aug 1997 · division
Priority: JP 720719314 Aug 1995
Granted: 5 Jan 1999
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H01J 37/3174
For changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation: particle-beam lithography, e.g. electron…
B82Y 10/00
Nanotechnology for information processing, storage or transmission
B82Y 40/00
Manufacture or treatment of nanostructures
G03F 7/2037
Exposure; Apparatus therefor: exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation