Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer
AssigneeMicron Technology, Inc.
InventorsGilbert Lai, Gurtej S. Sandhu, Ravi Iyer, Brian A. Vaartstra
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Abstract
A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a chemical vapor deposition chamber; establishing a nominal temperature for the substrate; introducing a carrier gas containing a gaseous, metalorganic precursor into the chamber for a time sufficient to form a metallic seed layer; and introducing a carrier gas containing a gaseous aluminum metalorganic precursor into the chamber for a time sufficient to form a conformal aluminum metal film over the metal refractory nitride layer.
Claims13
A method of forming an aluminum film on a refractory metal nitride layer comprising the steps of:
- positioning a substrate having said refractory metal nitride layer thereon within a chemical vapor deposition chamber;
- establishing a temperature for said substrate;
- introducing a carrier gas containing a gaseous, substantially halogen free metalorganic precursor into said chamber for a time sufficient to form a seed layer, wherein said metalorganic precursor has the formula:
- (1) M-L.sub.4, where M is a metal selected from the group consisting of Ti, Zr, and Hf, and where L is a hydrocarbyl group, boron hydride, or an amino group;
- or (2) M-L.sub.5, where M is a metal selected from the group consisting of V, Nb, and Ta, and where L is a hydrocarbyl group or an amino group;
- or (3) M-L.sub.3, where M is a metal selected from the group consisting of Rh and Ir, and where L is a hydrocarbyl group;
- and
- introducing a carrier gas containing a gaseous aluminum metalorganic precursor into said chamber for a time sufficient to form an aluminum metal film over said metal refractory nitride layer.
A method of forming an aluminum film on a refractory metal nitride surface comprising the steps of:
- placing a substrate having said refractory metal nitride surface thereon within a chemical vapor deposition chamber;
- establishing a temperature for said substrate;
- introducing a carrier gas containing a gaseous, substantially halogen free metalorganic precursor into said chamber to form a seed layer on said substrate, wherein said metalorganic precursor has the formula:
- (1) M-L.sub.4, where M is a metal selected from the group consisting of Ti, Zr, and Hf, and where L is a hydrocarbyl group, boron hydride, or an amino group;
- or (2) M-L.sub.5, where M is a metal selected from the group consisting of V, Nb, and Ta, and where L is a hydrocarbyl group or an amino group;
- or (3) M-L.sub.3, where M is a metal selected from the group consisting of Rh and Ir, and where L is a hydrocarbyl group;
- and
- without removing said substrate from said chamber, introducing a carrier gas containing a gaseous aluminum metalorganic precursor into said chamber for a time sufficient to form an aluminum metal film over said metal refractory nitride layer.
A method of forming an aluminum layer on a substrate comprising the steps of:
- providing a substrate having a refractory metal nitride surface thereon;
- placing said substrate within a chemical vapor deposition chamber;
- exposing said substrate to a substantially halogen free metalorganic precursor having the formula:
- (1) M-L.sub.4, where M is metal selected from the group consisting of Ti, Zr, and Hf, and where L is a hydrocarbyl group, boron hydride, or an amino group;
- or (2) M-L.sub.5, where M is a metal selected from the group consisting of V, Nb, and Ta, and where L is a hydrocarbyl group or an amino group;
- or (3) M-L.sub.3, where M is a metal selected from the group consisting of Rh and Ir, and where L is a hydrocarbyl group;
- and
- exposing said substrate to an aluminum metalorganic precursor.
Dependencies are inferred from the claim text.