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US 5,856,235 AGranted
Process of vacuum annealing a thin film metallization on high purity alumina
AssigneeNorthrop Grumman Corporation
InventorsWei NMI Koh, Wesley J. Louie
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Abstract
A thin-film microcircuit comprising fabricating a substrate of high-purity, densely packed alumina ceramic with a fine grain size, and metallization deposited thereon and applying a vacuum anneal to the metallization.
Claims4
A process to manufacture a thin-film microcircuit, comprising:
- providing a substrate made of at least 99.9% aluminum oxide with a density greater than 3.90 grams per cubic centimeter and an average grain size of less than 1 micron;
- sputtering a thin-film metallization onto the substrate, said metallization sequentially consisting of a sputter-deposited underlying refractory metal layer followed by a sputter-deposited gold layer atop the refractory metal layer;
- and
- applying a vacuum anneal to the metallization.
1 more element
Dependencies are inferred from the claim text.