Process for production of semiconductor substrate
AssigneeCanon Kabushiki Kaisha
InventorsKiyofumi Sakaguchi, Takao Yonehara
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Abstract
A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.
Claims24
A process for producing a semiconductor substrate comprising the steps of:
- forming a nonporous monocrystalline semiconductor layer on a first substrate wherein the first substrate comprises a porous layer at the surface thereof;
- bonding a second substrate to the nonporous monocrystalline layer;
- separating the bonded substrate such that a portion of the porous layer remains on the second substrate and a portion of the porous layer is not removed from the first substrate;
- removing the portion of the porous layer on the second substrate;
- and
- removing the portion of the porous layer remaining on the first substrate.
A process for producing a semiconductor substrate, comprising the steps of:
- forming a nonporous monocrystalline semiconductor layer on a first substrate wherein the first substrate comprises a porous layer at the surface thereof;
- bonding a second substrate to the nonporous monocrystalline layer with interposition of an insulative layer;
- separating the bonded substrates such that a portion of the porous layer remains on the second substrate and a portion of the porous layer is not removed from the first substrate;
- removing the portion of the porous layer on the second substrate;
- and
- removing the portion of the porous layer remaining on the first substrate.
Dependencies are inferred from the claim text.