Method of manufacturing a semiconductor integrated circuit device including an SRAM

A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:

• implanting an impurity of a second conductivity type into a prescribed region of a main surface of a semiconductor substrate of a first conductivity type to form an impurity diffusion layer of the second conductivity type;
• after forming the impurity diffusion layer of the second conductivity type, forming a first conductor layer of a prescribed thickness on the main surface of said semiconductor substrate with a first insulating film therebetween;
• forming a first conductor of a prescribed width by patterning said first conductor layer;
• covering top and side surfaces of said first conductor with a second insulating film;
• forming a second conductor layer of a prescribed thickness on said first and second insulating films;
• and
• forming a second conductor having one side on a top surface of said first conductor and another side on a region of said first insulating film where said first conductor has not been formed, wherein the impurity diffusion layer of the second conductivity type extends from the main surface under the first and second conductors with the first insulating layer therebetween.