Method of fabricating a low voltage zener-triggered SCR for ESD protection in integrated circuits
AssigneeWinbond Electronics Corp.
InventorTa-Lee Yu
Life of this patent
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Abstract
The method in accordance with the present invention is compatible with conventional CMOS fabrication processes to form a zener diode and a lateral silicon controlled rectifier constituting an on-chip ESD protection circuit in a semiconductor substrate. The zener diode is composed of a p-type doped region and an n-type doped region, wherein one of the doped regions, formed by deep diffusing impurities from a doped polysilicon layer, is arranged between two adjacent well regions. During an ESD event, the zener diode incurs breakdown to lower the trigger voltage of the lateral SCR device to within a range of about 5-7 Volts to thereby discharge the ESD current prior to damage of an internal circuit being protected.
Claims9
A method of fabricating an ESD protection circuit, which is constituted by a silicon-controlled rectifier and a zener diode, comprising:
- (a) providing a semiconductor substrate;
- (b) forming a first well region of a first conductivity type in said substrate and a second well region of a second conductivity type is said substrate, said first and second well regions having a junction therebetween;
- (c) forming a polysilicon layer doped with impurities of the first conductivity type having at least a portion overlying said well regions over said junction;
- (d) forming a doped region striding between said well regions by deep diffusing said impurities from said polysilicon layer into said substrate;
- (e) patterning said polysilicon layer to form a conductive block covering said doped region of the first conductivity type;
- (f) forming a doped region of the second conductivity type in said second well region in a vicinity of said doped region of the first conductivity type to build up said zener diode;
- and
- (g) forming an anode of said silicon-controlled rectifier in one of said well regions as well as a cathode of said silicon-controlled rectifier in the other one of said well regions.
The method as claimed in clam 1, wherein said doped region of the first conductivity type has a doping concentration in a range of 1.times.10.sup.17 to 1.times.10.sup.19 cm.sup.-3 and a junction depth in a range of about 0.5 to 0.8.mu.m.
Dependencies are inferred from the claim text.