Method of making compound semiconductor device having a reduced resistance
AssigneeFujitsu Limited
InventorKenji Imanishi
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Abstract
A method for fabricating a semiconductor device includes a step of depositing a first compound semiconductor layer by a MOVPE process to have a first conductivity type, doping a surface of the first compound semiconductor layer to the same, first conductivity type, by implementing a planar doping process as a result of decomposition of a gaseous dopant, such that no substantial growth of the first compound semiconductor layer occurs during the planar doping process, and depositing a second compound semiconductor layer of the first conductivity type on the doped surface of the first compound semiconductor layer by a MOVPE process.
Claims6
A method for fabricating a semiconductor device, comprising the steps of:
- (a) forming a first compound semiconductor layer of a first conductivity type and containing a first group V element, said step (a) including a decomposition of a metal organic source of said first group V element;
- (b) doping, after said step (a), a surface of said first compound semiconductor layer by a dopant to said first conductivity type while suppressing a growth of said first compound semiconductor layer substantially;
- and
- (c) forming, after said step (b), a second compound semiconductor layer of said first conductivity type and containing a second, different group V element, on said surface of said first compound semiconductor layer, said step (c) including a decomposition of a metal organic source of said second group V element.
Dependencies are inferred from the claim text.