Epitaxial wafer and its fabrication method
AssigneeMitsubishi Chemical Corporation
InventorsTadashige Sato, Megumi Imai, Hitora Takahashi
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Abstract
The present invention relates to an epitaxial wafer including a PN junction, which is improved in terms of light output and can have a good-enough ohmic electrode formed thereon. Epitaxial layers are formed of GaAs.sub.1-x P.sub.x where 0.45 <.times..ltoreq.1). A first P-type layer is formed by a vapor-phase growth process, and a second P-type layer is formed on the first P-type layer by a thermal diffusion process, said second P-type layer having a carrier concentration higher than that of said first P-type layer.
Claims12
An epitaxial wafer comprising N-type and P-type epitaxial layers forming a PN junction, wherein the epitaxial layers are formed of GaAs.sub.1-x P.sub.x where 0.45<.times..ltoreq.1, the P-type epitaxial layers are consisting essentially of a first P-type layer forming one side of the PN junction and having a carrier concentration of 0.8 to 3.times.10.sup.18 cm.sup.-3 and a second P-type layer forming a surface of the epitaxial layers and having a carrier concentration of at least 5.times.10.sup.18 cm.sup.-3.
A method of fabricating an epitaxial wafer comprising N-type and P-type epitaxial layers forming a PN junction by growing a first P-type layer by a vapor-phase growth process, and then forming a second P-type layer on the first P-type layer by a thermal diffusion process, said second P-type layer being higher in carrier concentration than said first P-type layer.
Dependencies are inferred from the claim text.