Method for producing a semiconductor laser

A method for producing a semiconductor laser comprising:

• a semiconductor substrate of a first conductivity type;
• a stripe-shaped multilayer structure, formed on the semiconductor substrate, the stripe-shaped multilayer structure including an active layer;
• and a current blocking portion formed on the semiconductor substrate on both sides of the stripe-shaped multilayer structure, the method comprising the steps of:
• depositing a plurality of semiconductor layers including the active layer on the semiconductor substrate;
• forming a stripe-shaped mask layer on the semiconductor substrate;
• selectively etching the semiconductor layer using an etchant to form the stripe-shaped multilayer structure, the etchant substantially not etching the mask layer;
• growing a first current blocking layer of a second conductivity type on the semiconductor substrate;
• and
• growing a second current blocking layer of the first conductivity type on the first current blocking layer, one of end portions of the second current blocking layer closer to the stripe-shaped multilayer structure having an apex angle of 60 degrees or more.