Method for forming pattern
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasayuki Endo, Akiko Katsuyama
Life of this patent
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Abstract
The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
Claims7
A method for forming a pattern, comprising:
- a first step of determining the composition of a resist so that a film thinning quantity of a resist pattern increases when the profile of the resist pattern tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern decreases when the profile of the resist pattern tends to be a round-shoulder profile as compared with the reference pattern profile;
- a second step of forming a resist film by coating a substrate with the resist whose composition is determined in a manner above;
- a third step of exposing said resist film through a mask;
- and
- a fourth step of developing said resist film which is exposed to thereby form a resist pattern.
A method of forming a pattern, comprising:
- a first step of determining the composition of a resist so that a film thinning quantity of a resist pattern increases when the concentration of an impurity within an environment for forming a resist pattern is larger than a predetermined value but so that the film thinning quantity of the resist pattern decreases when the concentration of the impurity within the environment for forming a resist pattern is smaller than the predetermined value;
- a second step of forming a resist film by coating a substrate with the resist whose composition is determined in a manner above;
- a third step of exposing said resist film through a mask;
- and
- a fourth step of developing said resist film which is exposed to thereby form a resist pattern.
Dependencies are inferred from the claim text.