High aspect ratio low resistivity lines/vias by surface diffusion

A metalization for interconnecting wiring of devices, said metalization comprising:

• a metal alloy for forming a wiring interconnection structure within a dielectric structure having sidewalls,
• said metal alloy including a first element selected from the group consisting of aluminum, gold and silver, and a second element of germanium,
• said metal alloy having a first region of germanium in a range of from 0 to 40 at. percent and a second region of germanium in the range of from 60 to 100 at. percent,
• wherein said first and second regions are graded such that there is an enrichment of Ge in the metal alloy at a surface of said metalization and an atomic percent of Ge tapers off from the surface, said metal alloy further including copper.

A product made by a process comprising steps of:

• heating an upper surface of a substrate to a temperature in a range between 300.degree. to 450.degree. C., said upper surface having regions containing exposed metal and openings adjacent to said exposed metal;
• and
• flowing a gas containing germanium over said upper surface of said substrate, such that the germanium in said gas reacts with said metal to form a metal alloy for flowing into adjacent openings,
• wherein said exposed metal includes one of aluminum, gold, copper, silver, or an alloy thereof.