Electronic devices having metallurgies containing copper-semiconductor compounds

A structure for providing electrical interconnection to a semiconductor chip comprising:

• an electrically insulative substrate;
• an electrical conductor containing Cu mounted on said substrate said conductor having a surface adapted for connection to the semiconductor chip;
• a layer on said surface containing a material which is a combination of Ge and a second material selected from the group consisting of Cu, Ni and combinations thereof;
• and
• means coupling said layer to the semiconductor chip.

A structure comprising:

• a metallic conductor containing Cu, said metal conductor having a solder bonded to a surface thereof;
• said surface containing a compound which is a combination of a first and a second material;
• said first material being Ge;
• and
• said second material being a metal selected from the group consisting of Cu, Ni and combinations thereof.

An electrical structure which comprises;

• a) a dielectric substrate;
• b) a metallic electrical conductor coupled to the substrate;
• c) a semiconductor device;
• d) coupling means connecting the semiconductor device to the metallic electrical conductor through a connecting surface, said coupling means including a barrier layer intervening the connecting surface and the metallic electrical conductor for preventing a diffusion onto the connecting surface of metal from the metallic electrical conductor, said barrier layer comprising a combination of a first material and a second material wherein:
• i) said first material is Ge;
• and
• ii) said second material is a metal selected from the group consisting of Cu, Ni and combinations thereof.