Method of forming a film on a substrate
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsTakashi Inushima, Shigenori Hayashi, Toru Takayama, Masakazu Odaka, Naoki Hirose
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Abstract
An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light sources for photo CVD or a pair of electrodes for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light of plasma evenly throughout the surfaces to be coated.
Claims23
A method for forming a film on a substrate comprising the steps of:
- preparing a substrate having an uneven upper surface in a reaction chamber;
- forming a layer comprising silicon oxide on said uneven upper surface by plasma CVD using a reactive gas comprising at least organic silane and nitrogen oxide in said reaction chamber;
- and
- cleaning an inside of said reaction chamber by plasma cleaning.
A method for forming a film comprising the steps of:
- preparing a substrate having an uneven upper surface provided with aluminum leads thereon;
- forming a layer comprising silicon oxide on said uneven upper surface by plasma CVD using a reactive gas comprising at least organic silane and nitrogen oxide.
A method of forming a film comprising the steps of:
- preparing a substrate having an uneven surface;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride by CVD;
- forming a second layer comprising silicon oxide by plasma CVD using a reactive gas containing at least organic silane and nitrogen oxide.
A method for forming a device comprising the steps of:
- preparing a substrate having an uneven upper surface;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride on said uneven upper surface by CVD using a first reactive gas comprising a carbon free silicon containing material;
- and
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane.
A method for forming a device comprising the steps of:
- preparing a substrate having an uneven upper surface provided with aluminum leads thereon;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride on said uneven upper surface by CVD using a first reactive gas comprising a carbon free silicon containing material;
- and
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a second reactive gas comprising at least organic silane.
A method for forming a device comprising the steps of:
- preparing a substrate having an uneven upper surface provided with a first lead comprising aluminum;
- forming a first layer comprising a material selected from the group consisting of silicon oxide and silicon nitride on said uneven upper surface by CVD using a carbon free silicon compound gas;
- forming a second layer comprising silicon oxide on said first layer by plasma CVD using a reactive gas containing at least organic silane;
- removing an upper portion of said second layer to obtain a smoother surface;
- and then
- forming a second lead comprising aluminum on said second layer.
Dependencies are inferred from the claim text.