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US 5,855,859 AGranted
Gettering agent
AssigneeMEMC Electronic Materials, Inc.
InventorsLarry W. Shive, Saeed Pirooz
Life of this patent
Estimating the term…
Abstract
A gettering agent for gettering metals from a solution. The gettering agent has a surface layer of SiO.sub.2 which is greater than 15 angstroms in thickness.
Claims7
A process for preparing a gettering agent, the process comprising growing a silicon dioxide layer on the surface of a granule of polycrystalline silicon having a size greater than about 0.01 millimeter and less than about 10 millimeters in diameter at a temperature of at least about 500.degree. C. in an oxygen containing atmosphere.
Dependencies are inferred from the claim text.