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AssigneeMicron Technology, Inc.
InventorsEric K. Grieger, Michael T. Andreas, Michael A. Walker
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A composition prepared from water, hydrofluoric acid (HF) and tetraalkylammonium hydroxide (TAAH, preferably tetramethylammonium hydroxide (TMAH)) or tetraalkylammonium fluoride and solvent with or without HF or TAAH is used to clean residue from a semiconductor wafer, where the residue is formed as a result of a planarization process, such as chemical mechanical polishing. Incorporation of TMAH into an aqueous HF composition retards the rate at which the composition dissolves borophosphosilicate (BPSG) without effecting the rate at which silica is dissolved. Thus, the aqueous HF/TMAH composition may be used to completely remove silica-containing residue from a BPSG surface, with a tolerable level of BPSG removal.
A process for removing planarization residue from a surface of a semiconductor wafer, comprising the steps:
A process for fabricating a semiconductor device, comprising the steps:
A process for preparing a cleaning composition comprising the steps of adding hydrofluoric acid (HF) to water to form dilute hydrofluoric acid, and then adding TAAH to the dilute HF, wherein TAAH has the formula (R).sub.4 NOH and each occurrence of R is independently selected from a C.sub.1-22 alkyl group.
A composition that results from the combination of water, hydrofluoric acid (HF), tetraalkylammonium hydroxide (TAAH) and at least one of organic solvent and surfactant, wherein TAAH has the formula (R).sub.4 NOH and each occurrence of R is independently selected from a C.sub.1-22 alkyl group.
Dependencies are inferred from the claim text.