Back to results
US 5,854,505 AGranted
Process for forming silicon oxide film and gate oxide film for MOS transistors
AssigneeSony Corporation
InventorsAtsushi Suzuki, Akihide Kashiwagi, Kazuhiko Tokunaga, Toshihiko Suzuki
Life of this patent
Estimating the term…
Abstract
A process for forming a silicon oxide film comprising: (a) heat treating a semiconductor substrate at a temperature of 1,150.degree. C. or higher under a 100% hydrogen gas atmosphere for a period of 10 to 600 minutes; and (b) forming a silicon oxide film on the semiconductor substrate by wet oxidation, followed by heat treating said silicon oxide film under an inert gas atmosphere containing a halogen element.
Claims6
A gate oxide film of a MOS transistor, which comprises a silicon oxide film formed by a process for forming a silicon oxide film comprising:
- (a) forming a silicon oxide film on a semiconductor substrate by wet oxidation;
- and
- (b) subjecting the silicon oxide film to heat treatment under an inert gas atmosphere containing a halogen element;
- wherein a pyrogenic oxidation process is used as the wet oxidation process;
- and
- wherein the halogen element is chlorine.
3 more elements
Dependencies are inferred from the claim text.