Hydrogen-terminated diamond misfet and its manufacturing method
AssigneeTokyo Gas Co., Ltd.
InventorsTakefumi Ishikura, Satoshi Yamashita, Hiroshi Kawarada, Akira Hokazono
Life of this patent
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Abstract
On the surface of a hydrogen-terminated diamond 1 formed by terminating a surface 2 of either a homoepitaxial diamond or a heteroepitaxial diamond or a surface-flattened polycrystal diamond are formed a drain-ohmic contact 4 and a source-ohmic contact 3 of gold or platinum, an insulating layer 5 formed of silicon oxide (SiO.sub.x : 1.ltoreq.X.ltoreq.2) and a gate electrode 6 mounted on said insulating layer, and the surface other than the element forming region is set to be an insulating region being non-hydrogen-terminated, for example, oxygen-terminated, and the elements formed on said region is being isolated.
Claims26
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is either a homoepitaxial diamond or a heteroepitaxial diamond;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is a polycrystal diamond with a flattened surface;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is either a homoepitaxial diamond or a heteroepitaxial diamond;
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is a polycrystal diamond with a flattened surface;
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is either a homoepitaxial diamond or a heteroepitaxial diamond;
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is a polycrystal diamond with a flattened surface;
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is either a homoepitaxial diamond or a heteroepitaxial diamond;
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
A hydrogen-terminated diamond MISFET comprising a drain and a source, and a gate electrode mounted between said drain and said source on an insulating layer, mounted on a region of a diamond where a surface of said diamond is hydrogen-terminated;
- wherein
- said diamond is a polycrystal diamond with a flattened surface;
- said insulating layer is a silicon oxide shown by the chemical formula SiO.sub.x (provided 1.ltoreq.X.ltoreq.2);
- said source or said drain is formed under an ohmic contact formed of gold or platinum;
- and
- the surface of said diamond is separated into a hydrogen-terminated region and an insulated region wherein the surface of said diamond is non-hydrogen-terminated, and FETs are formed on said hydrogen-terminated region wherein the elements are isolated.
Dependencies are inferred from the claim text.