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US 5,854,494 AGranted
Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuhiko Takemura
Life of this patent
Estimating the term…
Abstract
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
Claims20
An electro-optical display device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions said source and drain semiconductor regions having a p-type conductivity and have a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions.
1 more element
An electro-optical display device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions, and
- wherein said at least one MOS transistor further comprised a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
2 more elements
An electro-optical display device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions, and
- wherein said at least one MOS transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
2 more elements
An electro-optical display device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions.
1 more element
An electro-optical device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions, and
- wherein said at least one field effect transistor further comprises a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
2 more elements
An electro-optical display device comprising:
- a substrate having an insulating surface;
- and
- a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region,
- wherein said channel semiconductor region is thinner than said source and drain regions, and
- wherein said at least one field effect transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
2 more elements
Dependencies are inferred from the claim text.