Low temperature sintering microwave dielectric composition
AssigneeL.G. Electro-Components Ltd.
InventorsKi Hyun Yoon, Woo Sup Kim, Jae Beom Kim
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Abstract
A low temperature sintering microwave dielectric composition which can be sintered at a temperature of below 1250.degree. C. The composition includes a composition of xLiO.sub.1/2 --yCaO--.sub.z SmO.sub.3/2 --wTiO.sub.2 --qBO.sub.3/2 where 13.00.ltoreq.x.ltoreq.16.00, 11.00.ltoreq.y.ltoreq.13.00, 18.00.ltoreq.z.ltoreq.21.00, 45.00.ltoreq.w.ltoreq.51.00 and 0<q.ltoreq.12.0 wherein the numeric values are based on mol % with respect to the entire composition.
Claims2
A low temperature sintering high frequency dielectric composition, comprising a composition of xLiO.sub.1/2 --yCaO--.sub.z SmO.sub.3/2 --wTiO.sub.2 --qBO.sub.3/2 where 13.00.ltoreq.x.ltoreq.16.00, 11.00.ltoreq.y.ltoreq.13.00, 18.00<z.ltoreq.21.00, 45.00.ltoreq.w51.00 and 0.ltoreq.q.ltoreq.12.0 wherein the numeric values are based on mol % with respect to the entire composition.
Dependencies are inferred from the claim text.