Organic field-effect transistor and production thereof
AssigneeHitachi, Ltd.
InventorsSukekazu Aratani, Katsumi Kondo, Shuichi Ohara
Life of this patent
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Abstract
A field-effect transistor using a conjugated oligomer having an ionization potential of 4.8 eV or above in the semiconductor layer thereof works stably and has a long life-time and can be used in a liquid crystal display device as a switching element to give excellent contrast and good performances.
Claims8
A process for producing a field-effect transistor comprising a step of preparing a solution of a conjugated oligomer having an ionization potential of 4.8 eV or above and a step of forming a semiconductor layer by a dipping method.
A process for producing a field-effect transistor comprising a step of preparing a solution of a conjugated oligomer having an ionization potential of 4.8 eV or above and a step of forming a semiconductor layer by a printing method.
A process for producing a field-effect transistor comprising a step of preparing a solution of a conjugated oligomer having an ionization potential of 4.8 eV or above and a step of forming a semiconductor layer by a spin-coating method.
A process for producing a field-effect transistor comprising:
- (A) a step of forming a gate electrode on an insulating substrate,
- (B) a step of forming an insulating film on said gate electrode,
- (C) a step of forming a semiconductor layer constituted of a conjugated oligomer having an ionization potential of 4.8 eV or above by the use of a solution of said conjugated oligomer, and
- (D) a step of forming a source electrode and a drain electrode on said semiconductor layer.
A process for producing a field-effect transistor comprising:
- (A) a step of forming a source electrode and a drain electrode on an insulating substrate,
- (B) a step of forming a semiconductor layer constituted of a conjugated oligomer having an ionization potential of 4.8 eV or above on said source electrode and drain electrode by the use of a solution of said conjugated oligomer,
- (C) a step of forming an insulating film on said semiconductor layer, and
- (D) a step of forming a gate electrode on said insulating film.
A process for producing a field-effect transistor comprising
- (A) a step of forming a gate electrode on an insulating substrate,
- (B) a step of forming an insulating film on said gate electrode,
- (C) a step of forming a source electrode and a drain electrode on said insulating film, and
- (D) a step of forming a semiconductor layer constituted of a conjugated oligomer having an ionization potential of 4.8 eV or above on said source electrode and drain electrode by the use of a solution of said conjugated oligomer.
A process for producing a field-effect transistor comprising a step of patterning a semiconductor layer constituted of a conjugated oligomer having an ionization potential of 4.8 eV or above by laser ablation method.
A process for producing a field-effect transistor comprising patterning a semiconductor layer constituted of a conjugated oligomer having an ionization potential of 4.8 eV or above through a partial conversion of the semiconductor layer to an insulating material by the method of ultraviolet irradiation.
Dependencies are inferred from the claim text.