Method for forming metallization in semiconductor devices with a self-planarizing material

A method or forming a plurality of electrically conductive wires on a substrate, comprising the steps of:

• forming a relatively non-planar metal layer over a surface of the substrate;
• depositing a self-planarizing material over the surface of the metal layer to form a planarization layer having a surface relatively planar compared to the relatively non-planar metal layer, said planarization layer being formed by spinning on the self-planarizing material which comprises siloxane-benzocydobutene;
• depositing a photoresist layer over the surface of the planarization layer;
• patterning the photoresist layer, the patterned photoresist layer forming a mask to selectively expose portions of the planarization layer;
• etching groves into the exposed portion of the planarization layer and portions of the non-planar metal layer underneath the exposed portions of the planarization layer to form the plurality of electrically conductive wires, wherein the wires are separated by the grooves.

A method for forming a plurality of electrically conductive wires on a substrate, comprising the steps of:

• forming a metal layer over a relatively non-planer surface of the substrate, such metal having relatively non-planar surface portions;
• depositing a planarization layer over the surface of the metal layer by spinning on a self-planarizing material selected from material consisting of hydrogensilsequioxane or divinyl-siloxane-benzocyclobutene, such planarization layer having a relatively planar surface compared to the relatively surface portions of the metal layer;
• depositing a photoresist layer over the surface of the planarization layer;
• patterning the photoresist layer with a plurality of grooves to form a mask with such grooves exposing underling portions of the planarization layer;
• using the photoresist mask, etching grooves in the exposed portions of the planarization layer to form a second mask exposing underling non-planar surface portions of the metal layer;
• and
• using the mask formed in the planarization layer, etching grooves in the relatively non-planar metal layer to form the plurality of electrically conductive wires, such wires being separated by the grooves formed in the relatively non-planar metal layer.