Semiconductor device manufacturing method
AssigneeFuji Electric Co., Ltd.
InventorsYuichi Urano, Masato Nishizawa, Yoshiyuki Sakai, Naoki Ito, Shinichi Hashimoto
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Abstract
A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.
Claims9
A semiconductor device manufacturing method, comprising the steps of:
- forming a trench in an SOI substrate, wherein said SOI substrate includes a support substrate, a silicon element substrate, and a separating insulating film between said silicon element substrate and said support substrate, and wherein said trench has a bottom formed by a portion of a separating insulating film, and at least one side wall formed by at least one portion of said silicon element substrate;
- depositing a first polysilicon film in said trench;
- and
- oxidizing said first polysilicon film, such that said trench is filled with the oxidized polysilicon film.
A semiconductor device manufacturing method, comprising the steps of:
- forming a first insulating film on a silicon element substrate in an SOI substrate by thermal oxidation of said silicon element substrate, wherein said SOI substrate includes a support substrate, said silicon element substrate, and a separating insulating film between said silicon element substrate and said support substrate;
- etching said silicon element substrate to form a trench, said trench having a bottom formed by a portion of said separating insulating film, and at least one side wall formed by at least one portion of said silicon element substrate;
- depositing a first polysilicon film upon a surface of said bottom, a surface of each of said at least one side wall of said trench, and said first insulating film;
- etching said first polysilicon film on said first insulating film and on said bottom of said trench, using an anisotropic etching technique, to expose said first insulating film and a portion of said bottom, and to leave a portion of said first polysilicon film remaining on said at least one side wall of said trench;
- etching and removing said exposed first insulating film;
- and
- oxidizing said portion of said first polysilicon film remaining on said at least one side wall of said trench, to allow growth of a second insulating film isolating said silicon element substrate.
Dependencies are inferred from the claim text.