Method of manufacturing a semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsTadahiro Ohmi, Mamoru Miyawaki
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Abstract
A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.
Claims25
A method of manufacturing a semiconductor device comprising the steps of:
- providing an inorganic mask on a section on a substrate;
- providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate, the conductive material comprising aluminum;
- treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask, the insulative compound film comprising aluminum fluoride;
- removing the mask from the section;
- and
- forming, on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) providing an inorganic mask on a section on a substrate, the inorganic mask being arranged adjacent to a surface of the substrate;
- (b) providing, on a surface of the substrate not covered by the mask, a conductive material different from a material constituting the surface of the substrate;
- (c) treating a surface of the conductive material with a gas to form an insulative compound film of a material different from the mask;
- (d) after said step (c), removing the mask from the section;
- and
- (e) forming on a section from which the mask is removed, a semiconductor layer, a conductive layer or an insulative layer.
A method of manufacturing a semiconductor device comprising the steps of:
- forming plural insulating regions partially on the surface of a semiconductor body;
- forming a first semiconductor region on a semiconductor section between the insulating regions, the first semiconductor region having a conductivity type different from that of the semiconductor section;
- forming a mask partially on the first semiconductor region;
- providing a conductive layer on the mask, and on a section not covered by the mask on the first semiconductor region;
- treating a surface of the conductive layer with a gas to form an insulating material layer of a material different from that of the mask;
- removing the mask to expose a part of the first semiconductor region;
- and
- forming, on the exposed part of the first semiconductor region, a second semiconductor region of a conductivity type opposite to that of the first semiconductor region.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film on a surface of a semiconductor body;
- forming a mask on the first insulating film;
- etching a part of the first insulating film to expose a part of the semiconductor body;
- depositing on the exposed part of the semiconductor body a conductive material different from a material of the mask;
- treating a surface of the conductive material with a gas to form a second insulating film;
- and
- removing the mask material to form a pattern of the conductive material connected to the exposed part of the semiconductor body and to the first insulating film.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first insulating film on a semiconductor body;
- forming a mask on the first insulating film;
- removing a portion of the first insulating film not covered by the mask to expose a surface of the semiconductor body;
- forming a semiconductor layer on the exposed surface of the semiconductor body;
- forming a conductive layer on the semiconductor layer;
- treating a surface of the conductive layer with a gas to form a second insulating film of a material different from the conductive layer;
- removing the mask to expose a surface of the first insulating film;
- and
- forming a gate electrode on the exposed surface of the first insulating film.
A method of manufacturing a semiconductor device comprising the steps of:
- (a) forming a semiconductor region of a first conductivity type at a surface of a body of a second conductivity type;
- (b) providing an inorganic mask on a section on the semiconductor region, the inorganic mask being arranged adjacent to a surface of the semiconductor region;
- (c) providing, on a surface of the semiconductor region not covered by the mask, a conductive material different from a material constituting the surface of the substrate;
- (d) treating a surface of the conductive material with a gas to form an insulative compound film;
- (e) removing the mask from the section;
- and
- (f) forming, at a section from which the mask is removed, a semiconductor layer of the second conductivity type.
A method of manufacturing a semiconductor device having a MOSFET, comprising the steps of:
- (a) forming a mask on a portion of a semiconductor which is formed into a channel;
- (b) forming source and drain electrodes on a surface of the semiconductor which is not covered with the mask;
- (c) performing a reaction with a gas on a surface of said source and drain electrodes, to form an insulating film;
- (d) after the step (c), removing the mask, and
- (e) forming a gate electrode on the section from which the mask is removed,
- wherein said source and drain electrodes are made of metal or silicide.
Dependencies are inferred from the claim text.