Process for fabricating semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Takeshi Fukunaga, Akiharu Miyanaga
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Abstract
A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film., a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.
Claims6
A process for fabricating a semiconductor device comprising the steps of:
- maintaining, in contact with an amorphous semiconductor film comprising silicon, a catalytic element which accelerates the crystallization of the amorphous semiconductor film or a compound containing said catalytic element;
- applying heat treatment to the amorphous semiconductor film to crystallize the amorphous semiconductor film while maintaining the elemental catalyst or the compound thereof in contact with the amorphous semiconductor film;
- irradiating a laser beam or an intense light to the crystalline semiconductor film to further improve the crystallinity;
- heat treating the irradiated semiconductor film to reduce the number of dangling bonds in the crystalline semiconductor film and then
- heat treating the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
A process for fabricating a semiconductor device comprising the steps of:
- thermally crystallizing an amorphous semiconductor film comprising silicon using a catalytic element which accelerates the crystallization of the amorphous semiconductor film;
- laser crystallizing the semiconductor film after said thermally crystallizing step;
- and
- annealing the semiconductor film by thermal treatment after said crystallizing step to reduce the number of dangling bonds in the semiconductor film;
- and then
- annealing the semiconductor film in a hydrogen containing atmosphere to effect hydrogenation of the semiconductor film.
Dependencies are inferred from the claim text.