Semiconductor device by selectively controlling growth of an epitaxial layer without a mask
AssigneeSharp Kabushiki Kaisha
InventorHiroshi Nakatsu
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Abstract
A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.
Claims9
A method for fabricating a semiconductor structure comprising the steps of:
- forming a projecting portion on a main surface of a substrate;
- and
- substantially simultaneously depositing a first semiconductor layer on a region of the substrate which is irradiated by light and a second semiconductor layer on a region of the substrate which is shaded by the projecting portion, using the projecting portion as a mask by radiating the light at an angle with respect to the projecting portion, the first semiconductor layer having a different conductivity type from that of the second semiconductor layer.
A method for fabricating a semiconductor structure comprising the steps of:
- forming a projecting portion on a main surface of a substrate;
- and
- substantially simultaneously depositing a first semiconductor layer having a first conductivity type on a region of the substrate which is irradiated by light and a second semiconductor layer having a second conductivity type on a region of the substrate which is shaded by the projecting portion by optically exciting a gas material, using the projecting portion as a mask by radiating the light at an angle with respect to the projecting portion.
A method for fabricating a semiconductor light emitting device comprising the steps of:
- forming a projecting portion on a main surface of a substrate;
- forming a semiconductor multilayer on the projecting portion including an active layer which functions at least as a light emitting layer;
- irradiating the semiconductor multilayer by light at an angle with respect to the projecting portion using the projecting portion as a mask, so as to provide an irradiated region and an unirradiated region in the semiconductor multilayer, thereby forming a first semiconductor layer of a first conductivity type substantially simultaneously with a second semiconductor layer of a second conductivity type on the irradiated region and the unirradiated region.
A method for fabricating a semiconductor structure comprising the steps of:
- forming a projecting portion on a main surface of a substrate;
- and
- substantially simultaneously depositing a first semiconductor layer on a region of the substrate which is irradiated by light and a second semiconductor layer on a region of the substrate which is shaded by the projecting portion, using the projecting portion as a mask by radiating the light at an angle with respect to the projecting portion, the first semiconductor layer having a different composition from that of the second semiconductor layer.
Dependencies are inferred from the claim text.