Method of manufacturing a surface-emitting laser
AssigneeAlcatel Alsthom Compagnie Generale d'Electricite
InventorsAntonina Plais, Paul Salet, Joel Jacquet, Francis Poingt, Estelle Derouin
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Abstract
In a method of fabricating a surface-emitting laser, to assure good electrical confinement and good flatness of the mirrors defining the resonant cavity of the laser an electrical confinement layer is formed by carrying out the following steps: forming an undercut layer, at least one growth step on the undercut layer, forming a mesa defining the shape and the location of the top mirror and exposing the undercut layer on its vertical walls, and controlled lateral etching of the undercut layer. Applications include the fabrication of a semiconductor laser on a III-V (e.g. InP or GaAs) substrate.
Claims8
A method of fabricating a surface-emitting semiconductor laser component having an operating wavelength and comprising a vertical resonant cavity formed on a substrate of III-V elements, said cavity containing an electrical current injection layer provided with a horizontal electrical confinement layer disposed between a horizontal active layer and a mirror defining said cavity, the formation of said current injection layer comprising the following steps:
- growing over said active layer an undercut layer transparent at the operating wavelength of said component,
- at least one step of growing doped III-V elements on said undercut layer,
- forming a mesa centered relative to a location for said mirror such that lateral walls of said mesa are located over said undercut layer, and
- laterally etching said undercut layer to form said electrical confinement layer.
Dependencies are inferred from the claim text.