Method for fabricating thin films of barium strontium titanate without exposure to oxygen at high temperatures
AssigneeSymetrix Corporation
InventorsVikram Joshi, Carlos A. Paz de Araujo
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Abstract
A liquid precursor containing barium, strontium, and titanium, is applied to a first electrode, dried in air at a first temperature of 160.degree. C. and then a second temperature of 400.degree. C., and annealed at a temperature of 800.degree. C. in nitrogen to form a thin film of barium strontium titanate. A second electrode is deposited and then the device is patterned to form a capacitor, and a second anneal is performed at a temperature of 800.degree. C. in nitrogen. In this manner, a high electronic quality thin film of barium strontium titanate is fabricated without a high-temperature oxygen anneal.
Claims25
A method of fabricating a thin film of barium strontium titanate, said method comprising the steps of:
- (a) providing a substrate;
- (b) forming a thin film containing barium, strontium, oxygen, and titanium on said substrate;
- and
- (c) heating said thin film in an oxygen-free atmosphere at a temperature of between 500.degree. C. and 900.degree. C. to form a solid thin film of said barium strontium titanate on said substrate.
A method of fabricating a thin film of barium strontium titanate (BST) comprising:
- (a) providing a substrate;
- (b) forming a thin film containing barium, strontium, oxygen, and titanium on said substrate;
- and
- (c) heating said thin film on said substrate to a temperature of higher than 600.degree. C. without exposing it to oxygen to form said BST thin film on said substrate.
Dependencies are inferred from the claim text.