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US 5,852,703 AGranted
Ferroelectric thin film element and production method thereof
AssigneeFuji Xerox Co., Ltd.
InventorKeiichi Nashimoto
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AssigneeFuji Xerox Co., Ltd.
InventorKeiichi Nashimoto
Estimating the term…
The present invention is to provide a production method of a ferroelectric thin film element comprising an epitaxial ferroelectric thin film having stable composition control, an optical smoothness of the surface, and a high crystallization. In the production method, carrying out a first solid phase epitaxial growth process where a first organometallic compound is applied on the single-crystalline substrate and heated to form a ferroelectric buffer layer on a single-crystalline substrate, having a composition different from the substrate with a film thickness of 1 nm to 40 nm; carrying out at least once a second solid phase epitaxial growth process where a second organometallic compound is applied on the ferroelectric buffer layer formed in the above process and heated to form a ferroelectric single layer thin film with a film thickness of 10 nm or more, and being thicker than the ferroelectric buffer layer.
A production method of a ferroelectric thin film element, comprising a step of performing a first solid phase epitaxial growth process where a first organometallic compound is applied on the single-crystalline substrate and heated to produce a ferroelectric buffer layer having a composition different from a single-crystalline substrate on the single-crystalline substrate with a film thickness of 1 nm to 40 nm, and a step of forming a ferroelectric thin film layer on the ferroelectric buffer layer by at least once performing a second solid phase epitaxial growth process where a second organometallic compound is applied on the layer of the former process and heated to form a ferroelectric single layer thin film with a film thickness of 10 nm or more and being thicker than the ferroelectric buffer layer.
A ferroelectric thin film element, comprising a single layer ferroelectric buffer layer formed on a single crystal substrate and a ferroelectric thin film layer of a single layer or a plurality of layers formed on the ferroelectric buffer layer, wherein the ferroelectric buffer layer has a film thickness of 1 nm to 40 nm and the composition differs from that of the single-crystalline substrate, formed by the solid phase epitaxial growth, and the ferroelectric thin film layer comprising a single layer or a plurality of layers has each layer having a thickness of 10 nm or more, and being thicker than the ferroelectric buffer layer, formed by the solid phase epitaxial growth.
A production method of a ferroelectric thin film element comprising the steps of:
A ferroelectric thin film element, comprising a ferroelectric buffer layer of a single layer or a plurality of layers formed on a single crystal substrate and a ferroelectric thin film layer of a single layer or a plurality of layers formed on the ferroelectric buffer layer, wherein the ferroelectric buffer layer comprising a single layer or a plurality of layers has each layer having a film thickness of 1 nm to 40 nm and which composition is different from that of the single-crystalline substrate, formed by the solid phase epitaxial growth, and the ferroelectric thin film layer comprising a single layer or a plurality of layers has each layer having a film thickness of 10 nm or more, and being thicker than the ferroelectric buffer layer, formed by the solid phase epitaxial growth.
Dependencies are inferred from the claim text.