High density magnetoresistive random access memory device and operating method thereof
AssigneeMotorola, Inc.
InventorPeter K. Naji
Life of this patent
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Abstract
A high density magnetoresistive random access memory (MRAM) device is provided. The MRAM device includes a plurality of magnetic memory cells which employ a giant magnetoresistive effect to read and write states. The magnetic memory cells are divided into groups as memory units. The memory unit is activated by row and column signals provided by row and column decodes, respectively. Then, sense and word currents is applied to a target magnetic memory cell.
Claims23
A magnetoresistive random access memory module comprising:
- memory units being arranged in rows and columns, each of the memory units having a plurality of magnetic memory cells;
- a plurality of row lines, each row line being coupled to memory units lined in the row;
- a plurality of column lines, each column line being coupled to memory units lined in the column;
- and
- a plurality of second switches, each second switch being coupled to the row line to activate the memory units lined in the row.
A magnetoresistive random access memory module comprising:
- memory units being arranged in rows and columns, each of the memory units having a plurality of magnetic memory cells;
- a plurality of row lines, each row line being coupled to memory units lined in the row;
- a plurality of column lines, each column line being coupled to memory units lined in the column;
- and
- a plurality of second switches that are grouped by groups of second switches, each second switch being coupled to the row line, and each group of second switches being coupled to a control line.
A magnetoresistive random access memory device comprising:
- at least a pair of memory modules, each module having memory units being arranged in rows and columns, and each memory unit having a plurality of magnetic memory cells;
- a decoder for activating the magnetic memory cell;
- a detector for sensing states contained in the magnetic memory cell;
- and
- an equalizer for adjusting the sense lines at a predetermined voltage.
An operating method for a magnetoresistive random access memory device having memory units being arranged in rows and columns, each of the memory units having a plurality of magnetic memory cells, the method comprising the steps of:
- activating the memory unit;
- activating the magnetic memory cell in the memory unit;
- applying a sense current to the magnetic memory cell;
- and
- equalizing an output from the magnetic memory cell before sensing states in the magnetic memory cell.
Dependencies are inferred from the claim text.