Liquid crystal display with two gate electrodes each having a non-anodizing and one anodizing metallic layer and method of fabricating

A method of fabricating a liquid crystal display device, comprising:

• forming a first and second gate electrode on a first and second region, respectively, of a substrate, the first and second gate electrodes each including at least a first and second metallic layer, the first metallic layer having an etching selection ratio which differs from an etching selection ratio of the second metallic layer;
• forming a first insulating layer on the second metallic layer of the first and second gate electrodes;
• forming at least a second insulating layer over the substrate;
• forming a thin film transistor structure which utilizes the first gate electrode as a gate, the thin film transistor structure including a semiconductor layer on the second insulating layer over the first gate electrode, an impurity semiconductor layer on first and second portions of the semiconductor layer, and first and second source/drain electrodes on the impurity semiconductor layer covering the first and second portions of the semiconductor layer, respectively;
• depositing a passivation layer over the substrate;
• forming first and second contact holes, the first contact hole exposing the first source/drain electrode, and the second contact hole exposing the second gate electrode;
• and
• forming a pixel electrode on the passivation layer and in contact with the first source/drain electrode and the second gate electrode.

A liquid crystal display device, comprising:

• a substrate;
• a first and second gate electrode formed on a first and second region, respectively, of the substrate, the first and second gate electrodes each including a non-anodizing metallic layer and at least one anodizing metallic layer;
• a first insulating layer formed on the anodizing metallic layer of the first and second gate electrodes;
• at least a second insulating layer formed over the substrate;
• a semiconductor layer formed on the second insulating layer over the first gate electrode;
• an impurity semiconductor layer formed on first and second portions of the semiconductor layer;
• first and second source/drain electrodes formed on the impurity semiconductor layer covering the first and second portions of the semiconductor layer, respectively;
• a passivation layer formed over the substrate, the passivation layer defining a first contact hole exposing the first source/drain electrode, the passivation layer and the first and second insulating layer defining a second contact hole exposing the second gate electrode;
• and
• a pixel electrode formed on the passivation layer and in contact with the first source/drain electrode and the second gate electrode via the first and second contact holes, respectively.

A liquid crystal display device, comprising:

• a substrate;
• a first and second gate electrode formed on a first and second region, respectively, of the substrate, the first and second gate electrodes each including at least a first and second metallic layer, the first metallic layer having a different etching selection ratio than an etching selection ratio of the second metallic layer;
• a first insulating layer formed on the second metallic layer of the first and second gate electrodes;
• at least a second insulating layer formed over the substrate;
• a semiconductor layer formed on the second insulating layer over the first gate electrode;
• an impurity semiconductor layer formed on first and second portions of the semiconductor layer;
• first and second source/drain electrodes formed on the impurity semiconductor layer covering the first and second portions of the semiconductor layer, respectively;
• a passivation layer formed over the substrate, the passivation layer defining a first contact hole exposing the first source/drain electrode, the passivation layer and the first and second insulating layer defining a second contact hole exposing the second gate electrode;
• and
• a pixel electrode formed on the passivation layer and in contact with the first source/drain electrode and the second gate electrode via the first and second contact holes, respectively.