Radiation-sensitive detector element and method for producing it
AssigneeDr. Johannes Heidenhain GmbH
InventorPeter Speckbacher
Life of this patent
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Abstract
A radiation-sensitive detector element has an active area which is formed between two adjoining layer areas of a layer arrangement and within which a conversion of incident electromagnetic radiation into electrical signals takes place. Taking into consideration the penetration depth of the radiation, the position of the active area in relation to the two limiting surfaces is selected in such a way that at least two layer areas for connecting the detector element to an evaluation circuit can be mounted on a surface located opposite the radiation-sensitive surface which is impinged by the incident radiation.
Claims21
A radiation-sensitive detector element (1, 31, 41, 51, 61) with an active area (7, 27, 37, 47, 57, 67) formed between two adjoining layer areas (5, 6;
- 25, 26;
- 35, 36;
- 45, 46;
- 55, 56;
- 65, 66) of a layer arrangement (3, 33, 43, 53, 63) of different charge carriers, in which a conversion of incident electromagnetic radiation (h.nu.) into electrical signals takes place, wherein, taking into consideration the penetration depth of the radiation (h.nu.), the position of the active area (7, 27, 37, 47, 57, 67) in relation to the two delimiting surfaces is selected in such a way that at least two contact elements (8a, 8b;
- 38a, 38b;
- 48a, 48b;
- 58a, 58b;
- 68a, 68b) for connecting the detector element (1, 31, 41, 51, 61) to an evaluation circuit (100) can be mounted on a surface located opposite the radiation-sensitive surface on which the incident radiation (h.nu.) impinges.
A process for producing a radiation-sensitive detector element (1, 41, 51, 61) by means of the following process steps:
- a) generation of an etch stop layer (4, 44, 54, 64) in a defined doped semiconductor substrate slightly underneath the delimiting first surface,
- b) spatially selective removal by etching of the substrate material present underneath the etch stop layer (4, 44, 54, 64) until the etch stop layer (4, 44, 54, 64) forms a delimiting second surface,
- c) generation of a spatially limited layer area (6, 46, 56, 66), with different doping than the semiconductor substrate, on top of the etch stop layer (4, 44, 54, 64),
- d) providing contacts for the detector element (1, 31, 41, 51, 61) on a site opposite to the second surface by means of at least two contact elements (8a, 8b;
- 38a, 38b;
- 48a, 48b;
- 58a, 58b;
- 68a, 68b).
A radiation-sensitive detector element (1, 31, 41, 51, 61) with an active area (7, 27, 37, 47, 57, 67) formed between two adjoining layer areas (5, 6;
- 25, 26;
- 35, 36;
- 45, 46;
- 55, 56;
- 65, 66) of a layer arrangement (3, 33, 43, 53, 63) of different charge carriers, in which a conversion of incident electromagnetic radiation (h.nu.) into electrical signals takes place, wherein, taking into consideration the penetration depth of the radiation (h.nu.), the position of the active area (7, 27, 37, 47, 57, 67) in relation to the two delimiting surfaces is selected in such a way that at least two contact elements (8a, 8b;
- 38a, 38b;
- 48a, 48b;
- 58a, 58b;
- 68a, 68b) for connecting the detector element (1, 31, 41, 51, 61) to an evaluation circuit (100) can be mounted on a surface located opposite the radiation-sensitive surface on which the incident radiation (h.nu.) impinges wherein a filler material that is transparent to the radiation to be detected and which provides mechanical stabilization is arranged underneath the radiation-sensitive surface.
Dependencies are inferred from the claim text.