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US 5,852,314 AGranted
Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground
AssigneeSGS-Thomson Microelectronics S.A.
InventorsRiccardo Depetro, Claudio Contiero, Antonio Andreini
Life of this patent
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Abstract
N-channel LDMOS and p-channel MOS devices for high voltage integrated in a BiCMOS integrated circuit and exploiting a RESURF condition are provided with a buried region of the same type of conductivity of the epitaxial layer and a doping level intermediate between the doping level of the epitaxial layer and the doping level of a well region. The devices may be configured as source or drain followers without problems.
Claims6
An integrated circuit, comprising:
- a thin epitaxial layer having a first conductivity type, said epitaxial layer being grown on a substrate having a second conductivity type;
- n-channel lateral double-diffused insulated gate field-effect-transistor and p-channel insulated gate field-effect-transistor devices for high voltages and bipolar and CMOS devices for signal processing;
- wherein each of said lateral double-diffused insulated gate field-effect-transistor and insulated gate field-effect-transistor devices comprise a well region having said first conductivity type, a body region having said second conductivity type, and a buried region having said first conductivity type adjacent to said well region and projectively beneath at least said body region, said buried region having a dopant concentration intermediate between the concentration of said epitaxial layer and the concentration of said well region.
Dependencies are inferred from the claim text.