Optical communication system
AssigneeHitachi, Ltd.
InventorsMakoto Suzuki, Masahiro Aoki, Makoto Takahashi, Tsuyoshi Taniwatari
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Abstract
A semiconductor photonic integrated circuit and a manufacturing method thereof involving a selective-area growth technique using a set of insulating film patterning masks formed on a semiconductor substrate. The mask width and the mask-to-mask open space width are variable but numerically limited. A single crystal growth process is carried out to form on the same substrate a plurality of contiguous bulk semiconductor layers or quantum well layers differing from one another in terms of growth layer thickness or composition. The differences in energy level between these layers are utilized so that semiconductor photonic integrated devices of different functions are formed on the substrate.
Claims1
An optical communication system, comprising:
- a light source emitting an optical signal, said light source having an active region including a quantum well structure comprising semiconductor layers, a phase control region including a quantum well structure comprising semiconductor layers, and a passive distributed Bragg reflection region including a quantum well structure comprising semiconductor layers;
- an optical fiber transmitting said optical signal;
- wherein said active region, said phase control region, and said passive distributed Bragg reflection region are arranged in an order of said active region, said phase control region, and said passive distributed Bragg reflection region;
- and
- wherein a gain peak wavelength of said active region including said quantum well structure is larger than a gain peak wavelength of said phase control region including said quantum well structure, and a gain peak wavelength of said phase control region including said quantum well structure is larger than a gain peak wavelength of said passive distributed Bragg reflection region including said quantum well structure.
Dependencies are inferred from the claim text.