Method for forming interconnections in an integrated circuit
AssigneeSGS-Thomson Microelectronics S.A.
InventorConstantin Papadas
Life of this patent
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Abstract
The invention provides a method for producing wiring and contacts in an integrated circuit including the steps of forming insulated gate components on a semiconductor substrate; applying a photo-reducible dielectric layer to cover the substrate; etching holes and forming contacts; photo-reducing the dielectric to increase its conductivity; covering the resulting structure with an interconnect layer; etching the interconnect layer to define wiring in electrical contact with the contacts; and oxidizing the dielectric to reduce its conductivity.
Claims52
A method for producing wirings and contacts in an integrated circuit comprising the steps of:
- a) forming an insulated gate component on a semiconductor substrate;
- b) applying a dielectric layer to cover the insulated gate component, said dielectric layer including a photo-reducible material and an upper portion;
- c) etching holes in the dielectric layer to expose portions of the insulated gate component;
- d) filling the holes with a conductive material to form contact plugs;
- e) photo reducing at least said upper portion of said dielectric layer to increase conductive properties of said dielectric layer;
- f) covering said dielectric layer with an interconnect layer;
- g) etching said interconnect layer to define wirings, said wirings electrically contacting said contact plugs;
- and
- h) oxidizing said dielectric layer to reduce conductivity of said dielectric layer.
A method for producing wirings and contacts in an integrated circuit comprising the steps of:
- a) forming an insulated gate component on a semiconductor substrate;
- b) applying a dielectric layer to cover the insulated gate component, said dielectric layer includes a photo-reducible material and an upper portion;
- c) etching holes in the dielectric layer to expose portions of the insulated gate component;
- d) photo reducing at least said upper portion of said dielectric layer to increase conductive properties of said dielectric layer;
- e) filling the holes with a conductive material to form contact plugs;
- f) covering said dielectric layer with an interconnect layer;
- g) etching said interconnect layer to define wirings, said wirings electrically contacting said contact plugs;
- and
- h) oxidizing said dielectric layer to reduce conductivity of said dielectric layer.
A method for producing wirings and contacts in an integrated circuit comprising the steps of:
- a) applying a dielectric layer to a semiconductor substrate having at least one isolated electrode, said dielectric layer includes a photoreducible material and an upper portion;
- b) forming holes in the dielectric layer to expose portions of the semiconductor substrate;
- c) filling the holes with a conductive material to form contact plugs;
- d) photo reducing at least said upper portion of said dielectric layer to increase conductive properties of said dielectric layer;
- e) covering said dielectric layer with an interconnect layer;
- f) forming wirings on said interconnect layer, said wirings electrically contacting said contact plugs;
- and
- g) reducing conductivity of said dielectric layer.
A method for producing wirings and contacts in an integrated circuit comprising the steps of:
- a) applying a dielectric layer to a semiconductor substrate having at least one isolated electrode, said dielectric layer includes a photo-reducible material and an upper portion;
- b) forming holes in the dielectric layer to expose portions of the semiconductor substrate;
- c) photo reducing at least said upper portion of said dielectric layer to increase conductive properties of said dielectric layer;
- d) filling the holes with a conductive material to form contact plugs;
- e) covering said dielectric layer with an interconnect layer;
- f) forming wirings on said interconnect layer, said wirings electrically contacting said contact plugs;
- and
- g) reducing conductivity of said dielectric layer.
Dependencies are inferred from the claim text.